TGF2023-10 triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 1 dec 2008 ? rev a datasheet subject to change without notice. primary applications product description key features measured performance 50 watt discrete power gan on sic hemt bias conditions: vd = 28 - 40 v, idq = 1 a, vg = -3 v ty pical ? chip dimensions: 0.82 x 2.48 x 0.10 mm ? technology: 0.25 um power gan on sic ? bias: vd = 28 - 40 v, idq = 1 a, vg = -3 v typical ? 15 db nominal power gain ? 55% maximum pae ? > 47 dbm nominal psat ? frequency range: dc - 18 ghz ? space ? military ? broadband wireless the triquint TGF2023-10 is a discrete 10 mm gan on sic hemt which operates from dc-18 ghz. the TGF2023-10 is designed using triquint?s proven 0.25um gan production process. this process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. the TGF2023-10 typically provides > 47 dbm of saturated output power with power gain of 15 db. the maximum power added efficiency is 55% which makes the TGF2023-10 appropriate for high efficiency applications. lead-free and rohs compliant .
TGF2023-10 triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 2 dec 2008 ? rev a table ii recommended operating conditions table i absolute maximum ratings 1 / 2 / 35 dbm input continuous wave power pin 56 ma gate current ig 2 / 10 a drain current id -10 to 0 v gate voltage range vg 2 / 40 v drain voltage vd notes value parameter symbol -3 v gate voltage vg 3 a drain current under rf drive id_drive 1 a drain current idq 28 - 40 v drain voltage vd value parameter symbol 1 / these ratings represent the maximum operable val ues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and / or affect device lifetime. these are stress ratings only, an d functional operation of the device at these conditions is not implied. 2 / combinations of supply voltage, supply current, in put power, and output power shall not exceed the maximum power dissipation listed in table iv.
TGF2023-10 triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 3 dec 2008 ? rev a table iii rf characterization table 1 / bias: vd = 32 v & 40 v, idq = 1 a, vg = - 3v typical % 57 55 power added efficiency pae - 0.831 ? 172.6 0.819 ? 107.7 load reflection coefficient l 3 / pf/mm 0.461 0.444 parallel capacitance cp 2 / efficiency tuned: dbm 44.5 45 saturated output power psat db 19.5 19.5 power gain gain mm 158.1 190.2 parallel resistance rp 2 / pf/mm 0.314 0.263 parallel capacitance cp 2 / 0.716 ? 157.7 87.79 15 46 47.5 vd = 40 v - 0.753 ? 161.7 load reflection coefficient l 3 / mm 68.58 parallel resistance rp 2 / db 15 power gain gain % 47 power added efficiency pae dbm 46.5 saturated output power psat power tuned: units vd = 32 v parameter symbol 1 / values in this table are scaled from a 1.25 mm u nit gan on sic cell at 3.5 ghz 2 / large signal equivalent gan on sic output network 3 / optimum load impedance for maximum power or maxi mum pae at 3.5 ghz. the series resistance and inductance (rd and ld) shown in the figure on p age 5 is excluded
TGF2023-10 triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 4 dec 2008 ? rev a table iv power dissipation and thermal properties 1 / -65 to 150 oc storage temperature 320 oc 30 seconds mounting temperature 4 / jc = 2.0 (oc/w) tchannel = 150 oc tm = 2.0e+6 hrs vd = 40 v id = 3 a pout = 47.5 dbm pd = 63.8 w tbaseplate = 23 oc thermal resistance, jc under rf drive jc = 2.0 (oc/w) tchannel = 150 oc tm = 2.0e+6 hrs vd = 40 v id = 1 a pd = 40 w tbaseplate = 75 oc thermal resistance, jc 2 / 3 / pd = 40 w tchannel = 150 oc tm = 2.0e+6 hrs tbaseplate = 70 oc maximum power dissipation notes value test conditions parameter 1 / assumes eutectic attach using 1mil thick 80/20 aus n mounted to a 10mil cumo carrier plate 2 / for a median life of 2e+6 hours, power dissipatio n is limited to pd(max) = (150 oc ? tbase oc)/ jc. 3 / channel operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that channel temper atures be maintained at the lowest possible levels. 4 / channel temperatures at high drain voltages can be excessive, leading to reduced mttf. operation at reduced baseplate temperatures and/or pulsed rf m odulation is recommended. power de-rating curve 0 8 16 24 32 40 48 56 64 72 80 88 96 -60 -40 -20 0 20 40 60 80 100 120 140 160 baseplate temp (c) power dissipated (w) tm= 2.0e+6 hrs
TGF2023-10 triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 5 dec 2008 ? rev a unit gan cell reference plane drain lg rg cdg rd ld rdg gate rgs cgs r i +v i - gm v i rds cds ls rs source rp, cp linear model for 1.25 mm unit gan cell 47800 70500 rgd 1950 1550 rgs nh 0.0485 0.048 ld nh -0.013 -0.0135 lg nh 0.0147 0.0148 ls ps 3.57 4.11 tau pf 0.0646 0.053 cgd 319.2 373.7 rds pf 0.263 0.239 cds 0.23 0.24 ri pf 1.50 1.52 cgs s 0.138 0.134 gm 0.33 0.31 rd 0.07 0.08 rs 0.56 0.56 rg units vd = 32v idq = 19ma vd = 40v idq = 19ma model parameter
TGF2023-10 triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 6 dec 2008 ? rev a gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing ground is backside of die chip edge to bond pad dimensions are shown to cente r of pad die x,y size tolerance: +/- 0.050 thickness: 0.100 units: millimeters 0.154 x 2.050 vd bond pad #9 0.154 x 0.115 vg bond pad #1 - 8
TGF2023-10 triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 7 dec 2008 ? rev a gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. assembly notes ordering information gan on sic die TGF2023-10 package style part component placement and adhesive attachment assembl y notes: ? vacuum pencils and/or vacuum collets are the prefe rred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement . ? organic attachment (i.e. epoxy) can be used in low -power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to tempe ratures above 300 c to 3-4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is criti cal for long-term reliability. ? devices must be stored in a dry nitrogen atmospher e. interconnect process assembly notes: ? ball bonding is the preferred interconnect techniq ue, except where noted on the assembly diagram. ? force, time, and ultrasonics are critical bonding p arameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire.
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